The Georgia Tech Center for Organic Photonics and Electronics (COPE) is a premier national and resource center that creates flexible organic photonic and electronic materials and devices that serve the information technology, telecommunications, energy, and defense sectors. COPE creates the opportunity for disruptive technologies by developing new materials with emergent properties and by providing new paradigms for device design and fabrication.

Latest News and Events

  • STAMI Members Recognized as H-Index High Scorers

    STAMI Members and Chemistry & Biochemistry Professors Jean-Luc Bredas (COPE, GPTN) and Seth Marder (COPE, GTPN, CRĀSI) have H-index scores greater than 100, a singular feat that is achieved by few researchers.

  • 2018 STAMI Industry Partners Day

    Georgia Tech's Center for the Science and Technology of Advanced Materials and Interfaces (STAMI) held its 2018 STAMI Industrial Partners Day and Exposition on Sept. 27-28, 2018 at The Historic Academy of Medicine. The meeting featured talks from leaders in industry and academia, student presentations, and networking opportunities.

  • STAMI-COPE Professors receive DURIP Grant for Advanced Solar Cell Fabrication Equipment

    COPE, GTPN, and CRĀSI Professors Seth Marder, Zhiqun Lin, Natalie Stingelin, and Carlos Silva from the Schools of Chemistry and Biochemistry and Materials Sciences and Engineering have received a Defense University Research Instrumentation Program (DURIP) grant for equipment to establish a unique deposition and characterization station for a wide range of metal-halide perovskite materials that will allow control, with high precision, of thin-film deposition from solution in a controlled atmosphere, and enable characterization of the produced films during film formation as well as in device assemblies.

  • Nanostructured Gate Dielectric Boosts Stability of Organic Thin-Film Transistors

    A nanostructured gate dielectric developed in the labs of STAMI-COPE Professor Bernard Kippelen may have addressed the most significant obstacle to expanding the use of organic semiconductors for thin-film transistors. The structure, composed of a fluoropolymer layer followed by a nanolaminate made from two metal oxide materials, serves as gate dielectric and simultaneously protects the organic semiconductor – which had previously been vulnerable to damage from the ambient environment – and enables the transistors to operate with unprecedented stability.

    For more see the Article in Georgia Tech Research Horizons